Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-30V |
20（±V） |
-1.7V |
-5.6A |
|
54(mΩ) |
46(mΩ) |
|
**Detailed parameter description :** -polarity : P—Channel -Maximum drain voltage (Vds): -30V -Maximum leakage current(Id): -5.6A -On-state leakage resistance (RDS(ON)): 47mΩ @ VGS=10V, VGS=20V -threshold voltage(Vth): -1V
Domain and module applications：
**Application areas :**This product is suitable for various needsP-ChannelElectronic applications of channel field effect transistors.
Due to its performance characteristics, it may find wide application in the following areas: 1.
**Power management module :**Because the device has low on-state leakage resistance and moderate leakage current capability, it can be used in power switching and regulating circuits.
2.
**Current control module :**Suitable for electronic systems that require controllable current, such as current sources and current regulators.
3.
**Signal amplification module :**due to itsP-ChannelPolarity, suitable for some special signal amplification circuits.
4.
**Driver and switch modules :**in needP—Channel MOSFETIt plays a role in the switching circuit and driver to realize the switching and driving functions of the circuit.
These application scenarios are only examples, and the specific usage depends on the matching of system design requirements and performance parameters.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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