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CES2331-VB Product details
Back to previous pageProduct introduction：
Detailed parameter description: CES2331-VB is a P-channel MOSFET designed for low-voltage, medium-current applications. It is rated at -30V and can sustain a maximum current of -5.6A. This MOSFET has good conduction characteristics, and its static on-resistance is 47mΩ at 10V and 56mΩ at 4.5V. This makes it suitable for applications requiring moderate power. CES2331-VB has a wide range of gate-source voltage (Vgs), up to ±20V, and has good control characteristics. Its threshold voltage (Vth) is -1V, enabling precise control in different applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | -30V | -1.7V | -5.6A | 54(mΩ) | 46(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | -30V | -1.7V | -5.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | -30V | -1.7V | -5.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel |
model: CES2331-VBSilk screen: VB2355brand: VBsemiparameter: -Pchannel MOSFET -Rated voltage:-30V-Maximum continuous current: -5.6A-Static on-resistance (RDS(ON)): 47mΩ @ 10V, 56mΩ @ 4.5V -Gate-source voltage (Vgs):maximum ±20V -threshold voltage (Vth): -1VPackage:SOT23-3
Domain and module applications：
1.
**Power management module**:This oneMOSFETSuitable for low voltage power management and can be used in applications such as battery management, power switching and charge control.
2.
**signal amplifier**: Due to its medium current characteristics, it can be used to amplify signals, such as audio amplifiers and signal amplification circuits.
3.
**switch**: Suitable for various types of power switching modules, such as switch mode power supplies (SMPS).
4.
**LEDdrive**:Can be used asledlighting system, controlledBrightness and switch.
In summary,CES2331-VBIt is suitable for a variety of applicationsPchannelMOSFET, suitable for low voltage, medium current applications, providing medium power and reliability solutions.
**Power management module**:This oneMOSFETSuitable for low voltage power management and can be used in applications such as battery management, power switching and charge control.
2.
**signal amplifier**: Due to its medium current characteristics, it can be used to amplify signals, such as audio amplifiers and signal amplification circuits.
3.
**switch**: Suitable for various types of power switching modules, such as switch mode power supplies (SMPS).
4.
**LEDdrive**:Can be used asledlighting system, controlledBrightness and switch.
In summary,CES2331-VBIt is suitable for a variety of applicationsPchannelMOSFET, suitable for low voltage, medium current applications, providing medium power and reliability solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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