Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-30V |
20（±V） |
-1.7V |
-5.6A |
|
54(mΩ) |
46(mΩ) |
|
model : CES2323-VBsilk screen : VB2355brand : VBsemiencapsulation: SOT23-3 **Detailed parameter description :** -Architecture : P-Channel MOSFET -Voltage level : -30V -Current capability: -5.6A (Note: The negative sign here indicates that the current direction is drain to source. ) - RDS(ON): 47mΩ @ VGS=10V, VGS=20V -threshold voltage (Vth): -1V
Domain and module applications：
1.
**Power inverter: **Suitable for power inverter modules that provide efficient energy conversion at negative voltages.
2.
**switch: **It can be used in power switch modules under negative voltage to achieve controllable and adjustable circuits.
3.
**Signal amplification: **Suitable for some applications that require negative voltage signal amplification, such as audio amplifiers, etc.
4.
**Power protection: **It can be used in power protection modules under negative voltage to ensure that the circuit can work safely under abnormal conditions.
**Precautions for use :** -When designing your circuit, be sure to understand and follow the device's maximum voltage and current ratings to prevent device damage.
-Pay attention to proper thermal measures, especially in high current applications, to ensure that the device is within the normal operating temperature range.
-Because it isP-Channel MOSFETits on-resistance and current direction characteristics are the same asN-Channel MOSFETInstead, consider this in your design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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