Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-30V |
20（±V） |
-1.7V |
-5.6A |
|
54(mΩ) |
46(mΩ) |
|
**Product number:** B3E-VB **Silk screen:**VB2355**brand:**VBsemi**parameter: ** -Package type: SOT23-3 -Channel type: P—Channel -Rated voltage: -30V-Maximum current: -5.6A-On-state resistance (RDS(ON)): 47mΩ @ VGS=10V, VGS=20V -threshold voltage (vth): -1V
Domain and module applications：
**Application areas:** 1.
**Power management module: **due to itsP-ChannelChannel design,B3E-VBSuitable for power management modules, it can effectively control current and voltage and improve power efficiency.
2.
**signal amplifier: **In some signal amplifier circuits,B3E-VBIt can be used as a switching element to adjust the degree of signal amplification.
3.
**Power switch module: **Due to its performance in load current and supply voltage, it can be used in power switching modules to achieve efficient power control.
4.
**Driver module: **As a field effect transistor,B3E-VBIt can also be used in various drive modules to ensure efficient and reliable operation of the module.
Overall,B3E-VBSuitable for needsP-ChannelElectronic modules of channel field effect transistors are widely used in fields such as power management, signal processing and drive control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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