Product introduction：
Model: APM2307AC-TRL-VB Silk screen: VB2355 Brand: VBsemi **Application introduction:** This MOSFET is usually used in circuits that require P-Channel channels, which may include power switches, power management, amplifiers, etc. Due to its large load current characteristics, it can be used in power supplies and circuits that need to carry larger currents.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-30V |
20（±V） |
-1.7V |
-5.6A |
|
54(mΩ) |
46(mΩ) |
|
parameter : -encapsulation : SOT23-3 -Channel type :P-Channel-Rated channel voltage (VDS): -30V -Rated channel current (ID): -5.6A -static drain-Source resistance (RDS(ON)): 47mΩ @ VGS=10V, VGS=20V -Gate-source threshold voltage (Vth): -1Vencapsulation: SOT23-3 **Detailed parameter description:** 1. **Channel type: **P-ChannelThe channel type indicates that this is a P-Channel MOSFET, suitable for needs P-ChannelCharacteristic circuit design. 2. **Rated channel voltage: ** -30VIndicates this MOSFETThe rated operating voltage is -30V, suitable for the corresponding supply voltage range. 3. **Rated channel current: ** -5.6AIndicates this MOSFETThe maximum rated operating current is -5.6A, suitable for circuits with higher load current requirements. 4. **static drain-Source resistance: ** 47mΩ @ VGS=10V, VGS=20VIndicates the static drain under different gate-source voltages.-Source resistance. This is important for evaluating conduction losses in the on state. 5. **Gate-source threshold voltage: ** -1VIndicates that under ideal conditions, when the gate-source voltage reaches -1Vhour, MOSFETStart conduction.
Domain and module applications：
**Domains and module applications:** 1.
**Power management module: **Due to its large load current and moderate operating voltage range, it is suitable for power switching circuits in power management modules.
2.
**Power amplifier module: **Used for audio power amplifier and other modules, by controlling MOSFETconduction state to regulate power.
3.
**Power inverter: **In the power inverter, it is used to control the switching circuit to achieve energy conversion from DC to AC.
Please note that specific applications and module designs require further confirmation based on specific circuit requirements and specifications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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