Product introduction：
Model: 2303N-VB Silk screen: VB2355 Brand: VBsemi Parameters: - Package: SOT23-3 - Channel type: P—Channel - Rated voltage: -30V - Maximum current: -5.6A - Static on-state resistance (RDS(ON) ): 47mΩ (when VGS=10V, VGS=20V) - Threshold voltage (Vth): -1V **Application introduction:** 2303N-VB is a P-Channel MOSFET, suitable for circuits that require power switching. Has moderate rated voltage and current handling capabilities.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-30V |
20（±V） |
-1.7V |
-5.6A |
|
54(mΩ) |
46(mΩ) |
|
**Detailed parameter description:** 1. **Channel type:**P-Channelchannel, suitable forP-Channel MOSFET, the part responsible for current flowing through the channel. 2. **Rated voltage:** -30V,expressMOSFETMaximum voltage under normal operating conditions. 3. **Maximum current:** -5.6A,expressMOSFETThe maximum current it can withstand. 4. **static on resistance (RDS(ON)):** 47mΩ,expressMOSFETResistance in the on state. 5. **threshold voltage (Vth):** -1V,expressMOSFETVoltage threshold from off to on.
Domain and module applications：
**Application areas:** 1.
**Power management: **for power switching modules such as DC-DC converter (DC-DC Converter).
2.
**Current control: **Suitable for circuits requiring current control, such as current sources.
3.
**Battery management: **Applications in battery charge and discharge control circuits ensure effective battery management.
4.
**motor driven: **As a power switching device in motor control circuits.
**Module application:** 1.
**Power module: **Used in DC power switching modules to ensure efficient power management.
2.
**Motor drive module: **It is used as a power switching device in the motor driver to control the start, stop and speed of the motor.
3.
**Battery management module: **Used for charging and discharging control modules to ensure safe and efficient use of batteries.
Overall,2303N-VBSuitable for a variety of power electronics applications with moderate performance parameters where requiredP-Channel MOSFETvarious circuit designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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