Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-30V |
20（±V） |
-1.7V |
-5.6A |
|
54(mΩ) |
46(mΩ) |
|
**Detailed parameter description: ** -brand: VBsemi-type: P-Channel MOSFET -Maximum working voltage: -30V-Maximum drain current: -5.6A-On resistance: 47mΩ (@VGS=10V, VGS=20V) -Threshold voltage: -1V-Package:SOT23-3
Domain and module applications：
**Application areas and modules:** 1.
**Power management module:**SI2323DS-T1-VBThe low on-resistance and high leakage current capability make it an ideal choice in power management modules such as battery management systems andDC-DCconverter.
2.
**mobile device: **Due to its small package,SI2323DS-T1-VBSuitable for power management modules in mobile devices such as smartphones, tablets and portable audio devices.
3.
**Automotive electronic systems: **In automotive electronic systems,SI2323DS-T1-VBIt can be used in electric drive modules of electric vehicles, battery management systems and power switch modules in on-board charging piles.
4.
**industrial control:**SI2323DS-T1-VBCan be used in industrial control areas, such asPLC(programmable logic controller), industrial automation equipment and robot control modules.
5.
**LEDillumination: **existledIn lighting applications,SI2323DS-T1-VBCan be used asledDriver circuit and power management module help achieve efficient energy consumption and stable power output.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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