Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-30V |
20（±V） |
-1.7V |
-5.6A |
|
54(mΩ) |
46(mΩ) |
|
Detailed parameter description: -brand:VBsemi-model: HY04P30-VB -type: P-Channel MOSFET -Maximum drain withstand voltage: -30V-Maximum drain current:-5.6A-RDS(ON): 47mΩ @ VGS=10V, VGS=20V -threshold voltage (vth): -1V-Package:SOT23-3
Domain and module applications：
Applicable areas and module examples: 1.
Low Voltage Circuit Design: Due to its low resistance characteristics and moderate current capabilities,HY04P30-VBCommonly used in switch and driver modules for low voltage circuits.
2.
Power management: In the power management module,HY04P30-VBIt can be used for power switch and reverse protection functions to ensure stable operation of the circuit.
3.
LEDDrive: inledIn lighting applications, this device can be usedledSwitch control in the driver circuit provides efficient energy management.
4.
Battery protection: As a key component of the battery protection module,HY04P30-VBIt can control the current during charging and discharging and protect the battery from damage.
These areas and modules are examples only,HY04P30-VBIt can also play an important role in other applications, depending on design needs and performance requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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