Application Overview: US3416-VB is an N-channel MOSFET in SOT23-3 package, suitable for a variety of applications.
The following is a brief overview of its parameters and applications: 1.
**Package and Type:** - SOT23-3 package, suitable for designs with space constraints.
- N-channel MOSFET, suitable for controlling negative electrical signals.
2.
**Electrical Characteristics:** - **Voltage Rating:** - Drain-Source Voltage (Vds): 30V, suitable for medium voltage applications.
- **Current Rating:** - Continuous Drain Current (Id): 6.
5A, handles medium to higher current loads.
- **On resistance:** - RDS(ON): 47mΩ @ VGS=10V, VGS=20V, indicating low resistance for efficient conduction.
3.
**Threshold voltage:** - Threshold voltage (Vth): 1.
2~2.
2V, specifies the gate voltage range at which the MOSFET starts to conduct.
By taking full advantage of its SOT23-3 package and N-channel features, the US3416-VB is suitable for a wide range of applications requiring efficient energy management and load control.