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SPP2304S23RG-VB Product details
Back to previous pageProduct introduction：
Application Overview: VBsemi SPP2304S23RG-VB is an N-channel MOSFET in SOT23-3 package suitable for a variety of applications.
By taking full advantage of its SOT23-3 package and N-channel features, the SPP2304S23RG-VB is suitable for a wide range of applications requiring efficient energy management and load control.
By taking full advantage of its SOT23-3 package and N-channel features, the SPP2304S23RG-VB is suitable for a wide range of applications requiring efficient energy management and load control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 30V | 1.7V | 6.5A | 33(mΩ) | 30(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 30V | 1.7V | 6.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 30V | 1.7V | 6.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel |
VBsemi SPP2304S23RG-VBparameter: -Package: SOT23-3 -type:N-aisle MOSFET -Drain-Source voltage (vds): 30V -Continuous drain current (ID): 6.
5A -On-resistance (RDS(ON)):existVGS=10V,VGS=20Vtime is 30mΩ -threshold voltage (vth):1.
2~2.
2V
5A -On-resistance (RDS(ON)):existVGS=10V,VGS=20Vtime is 30mΩ -threshold voltage (vth):1.
2~2.
2V
Domain and module applications：
The following is a brief overview of its parameters and applications: 1. **Package and Type:** - SOT23-3 package, suitable for designs with space constraints. - N-channel MOSFET, suitable for controlling negative electrical signals. 2. **Electrical Characteristics:** - **Voltage Rating:** - Drain-Source Voltage (Vds): 30V, suitable for medium voltage applications. - **Current Rating:** - Continuous Drain Current (Id): 6.5A, handles medium to higher current loads. - **On resistance:** - RDS(ON): 30mΩ at VGS=10V, VGS=20V, indicating low resistance for efficient conduction. 3. **Threshold voltage:** - Threshold voltage (Vth): 1.2~2.2V, specifies the gate voltage range at which the MOSFET starts to conduct.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
