Product introduction:
Application Introduction: Si2338DS-T1-GE3 (silk screen: VB1330) is an N-channel power MOSFET produced by VBsemi.
The following is a detailed parameter description and application introduction: Si2338DS-T1-GE3 is an N-channel power MOSFET suitable for applications requiring high current carrying capacity and low on-resistance such as inductive loads, switching power supplies, and DC-DC converters.
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The main parameters include rated voltage of 30V, rated current of 6.
5A, RDS(ON) of 30mΩ @ 10V, 33mΩ @ 4.
5V, gate-source voltage range of ±20V, gate-source threshold voltage range of 1.
2V~2.
2V, package type for SOT23-3.
Application fields: Si2338DS-T1-GE3 (VB1330) is suitable for a variety of fields and application scenarios, and is mainly used in high-current circuits that require N-channel power MOSFETs.
Si2338DS-T1-GE3 (VB1330) is an N-channel power MOSFET, suitable for modules in power management modules, power tools, automotive electronic systems, industrial control systems and communication equipment.
It features high current carrying capacity and low on-resistance, making it suitable for circuits requiring high power and efficiency.
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