Product introduction:
Model: SI2318DS-T1-GE3 Silk screen: VB1330 Brand: VBsemi Application introduction: SI2318DS-T1-GE3 (silk screen: VB1330) is an N-channel power MOSFET produced by VBsemi.
The following is a detailed parameter description and application introduction: SI2318DS-T1-GE3 is an N-channel power MOSFET suitable for high voltage and high current applications.
Its main parameters include rated voltage of 30V, rated current of 6.
5A, RDS(ON) of 30mΩ @ 10V, 33mΩ @ 4.
5V, gate-source voltage range of ±20V, gate-source threshold voltage range of 1.
2V~2.
2V, package The type is SOT23-3.
SI2318DS-T1-GE3 (VB1330) is an N-channel power MOSFET, suitable for modules in power management modules, power tools, household appliances, battery management systems, industrial control systems and communication equipment.
It has low resistance and high current carrying capacity, making it suitable for circuits requiring high power and efficiency.
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