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SI2318DS-T1-GE3-VB Product details
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Model: SI2318DS-T1-GE3 Silk screen: VB1330 Brand: VBsemi Application introduction: SI2318DS-T1-GE3 (silk screen: VB1330) is an N-channel power MOSFET produced by VBsemi.
The following is a detailed parameter description and application introduction: SI2318DS-T1-GE3 is an N-channel power MOSFET suitable for high voltage and high current applications.
Its main parameters include rated voltage of 30V, rated current of 6.
5A, RDS(ON) of 30mΩ @ 10V, 33mΩ @ 4.
5V, gate-source voltage range of ±20V, gate-source threshold voltage range of 1.
2V~2.
2V, package The type is SOT23-3.
SI2318DS-T1-GE3 (VB1330) is an N-channel power MOSFET, suitable for modules in power management modules, power tools, household appliances, battery management systems, industrial control systems and communication equipment.
It has low resistance and high current carrying capacity, making it suitable for circuits requiring high power and efficiency.
The following is a detailed parameter description and application introduction: SI2318DS-T1-GE3 is an N-channel power MOSFET suitable for high voltage and high current applications.
Its main parameters include rated voltage of 30V, rated current of 6.
5A, RDS(ON) of 30mΩ @ 10V, 33mΩ @ 4.
5V, gate-source voltage range of ±20V, gate-source threshold voltage range of 1.
2V~2.
2V, package The type is SOT23-3.
SI2318DS-T1-GE3 (VB1330) is an N-channel power MOSFET, suitable for modules in power management modules, power tools, household appliances, battery management systems, industrial control systems and communication equipment.
It has low resistance and high current carrying capacity, making it suitable for circuits requiring high power and efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 30V | 1.7V | 6.5A | 33(mΩ) | 30(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 30V | 1.7V | 6.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 30V | 1.7V | 6.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel |
parameter: -Channel type:Nchannel -Rated voltage: 30V -Rated current:6.
5A-RDS(ON):30mΩ@10V,33mΩ @ 4.
5V -Gate-source voltage range: ±20V -Gate-source threshold voltage range: 1.
2V~2.
2V -Package type:SOT23-3
5A-RDS(ON):30mΩ@10V,33mΩ @ 4.
5V -Gate-source voltage range: ±20V -Gate-source threshold voltage range: 1.
2V~2.
2V -Package type:SOT23-3
Domain and module applications：
Application areas: SI2318DS-T1-GE3(VB1330) is suitable for a variety of fields and application scenarios, mainly used forNChannel powerMOSFETcircuit. The following are some typical application areas: 1.Power management module:SI2318DS-T1-GE3It can be used in power management modules to provide efficient power conversion and stable current output, improving system power consumption and efficiency. 2.Power tools and household appliances: It can be used in motor drive circuits in power tools and household appliances to provide efficient and reliable power output. 3.Battery management system:SI2318DS-T1-GE3It can be used in charge and discharge control circuits in battery management systems to provide efficient and reliable battery management. 4.Industrial control systems and communication equipment:SI2318DS-T1-GE3Suitable for switching circuits in industrial control systems and communication equipment to provide stable power management and current control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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