Product introduction：
SI2318ADS-T1-GE3-VB is an N-Channel field effect transistor, specially designed for power management, power adapters and industrial control fields.
It is packaged in SOT23-3, has a rated voltage of 30V, a rated current of 6.
5A, low on-resistance (RDS(ON) = 30mΩ), and excellent performance under different voltages (VGS=10V, VGS=20V).
The threshold voltage (Vth) is in the range of 1.
2~2.
2V, providing design flexibility.
This field effect transistor is suitable for power management and industrial control circuits that require N-channel field effect transistors.
Its reliable performance and SOT23-3 packaging make it an ideal choice for electronic engineers in small circuit board and module designs.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N-Channel |
30V |
20（±V） |
1.7V |
6.5A |
|
33(mΩ) |
30(mΩ) |
|
**SI2318ADS-T1-GE3-VB** - **Silk screen:**VB1330-**brand:**VBsemi-**parameter: ** -Package: SOT23-3 -Channel type: N—Channel -Rated voltage:30V -Rated current: 6.
5A -Turn on resistance: RDS(ON) = 30mΩ @ VGS = 10V, VGS = 20V -Threshold voltage:Vth = 1.
2~2.
2V
Domain and module applications：
**Fields:** Power management, power adapters, industrial control, etc. - **Module Application:** Suitable for SOT23-3 packaged circuit board and module design, especially in scenarios where N-channel field effect transistors are required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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