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ME2318-VB Product details
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**VBsemi ME2318-VB MOSFET** - **Package Type:** SOT23-3 - **Channel Type:** N-Channel - **Maximum Withstand Voltage:** 30V - **Maximum Continuous Drain Current :** 6.
5A - **On-resistance (RDS(ON)): ** 30mΩ @ VGS=10V, VGS=20V - **Gate threshold voltage (Vth): ** 1.
2~2.
2V This MOSFET is suitable for Various power management, switching power supply and power amplifier applications.
Due to its small package and moderate electrical properties, it can be widely used in different fields.
5A - **On-resistance (RDS(ON)): ** 30mΩ @ VGS=10V, VGS=20V - **Gate threshold voltage (Vth): ** 1.
2~2.
2V This MOSFET is suitable for Various power management, switching power supply and power amplifier applications.
Due to its small package and moderate electrical properties, it can be widely used in different fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 30V | 1.7V | 6.5A | 33(mΩ) | 30(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 30V | 1.7V | 6.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 30V | 1.7V | 6.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel |
**Detailed parameter description:**-**Package type:** SOT23-3is a smallSMDpackage, suitable for compact space and lightweight design.
- **Channel type:**N-ChannelThe trench type is typically used in low-side switching configurations.
- **Maximum withstand voltage:**30VThe maximum drain voltage makes it suitable for low to medium voltage applications.
- **Maximum continuous drain current:**6.
5AThe current carrying capabilities make it suitable for medium power applications.
- **On resistance:** 30mΩThe low on-resistance helps reduce power consumption and improve efficiency.
- **Gate threshold voltage:** 1.
2~2.
2VThe gate threshold voltage allows flexible driving at different levels.
- **Channel type:**N-ChannelThe trench type is typically used in low-side switching configurations.
- **Maximum withstand voltage:**30VThe maximum drain voltage makes it suitable for low to medium voltage applications.
- **Maximum continuous drain current:**6.
5AThe current carrying capabilities make it suitable for medium power applications.
- **On resistance:** 30mΩThe low on-resistance helps reduce power consumption and improve efficiency.
- **Gate threshold voltage:** 1.
2~2.
2VThe gate threshold voltage allows flexible driving at different levels.
Domain and module applications：
**Typical application areas:** 1. **Power management module: **Used for power switches, power inverters and voltage stabilizing modules. 2. **Battery powered system: **Suitable for portable devices, mobile communication devices, etc. 3. **Power conversion module: **existDC-DCConverters and switching power supplies play a role. 4. **Power amplifier: **For use in audio amplifiers and other low to medium power amplifiers.Through applications in these fields,ME2318-VB MOSFETCan provide reliable performance and efficient power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
