Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N-Channel |
30V |
20（±V） |
1.7V |
6.5A |
|
33(mΩ) |
30(mΩ) |
|
**specification: ** -silk screen : VB1330 -brand :VBsemi-encapsulation : SOT23-3 -type :N-Channelchannel -Rated voltage (VDS): 30V -Rated current (ID): 6.
5A -static drain-Source resistance (RDS(ON)): 30mΩ @ VGS=10V, VGS=20V -threshold voltage(Vth): 1.
2~2.
2V
Domain and module applications：
1. **Power module: **Due to its higher voltage and current ratings, it is suitable for use in power modules to help achieve effective power control and regulation. 2. **Current control module: **Through its low leakage resistance and adjustable threshold voltage, it can be used in current control modules for precise control of current. 3. **Switching power supply: **In switching power supplies, this field effect transistor can be used for switching regulation, improving efficiency and performance. 4. **Current amplifier: **due to itsNChannel structure, suitable for current amplifier circuits, functioning in a variety of amplification applications.Please note that the specific application depends on the system design requirements, ensure that the selected device meets the electrical and performance specifications of the specific application.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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