Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N-Channel |
30V |
20（±V） |
1.7V |
6.5A |
|
33(mΩ) |
30(mΩ) |
|
**VBsemi VB1330 N-Channel MOSFET** - **Parameter Description: ** -Voltage: 30V -Current: 6.
5A -On-state resistance (RDS(ON)): 30mΩ @ VGS=10V, VGS=20V -threshold voltage(Vth):1.
2~2.
2V - **Package:**SOT23-3
Domain and module applications：
**Application areas:** 1. **Power module: **Due to its low on-state resistance and high current capability,VB1330Can be used in power switch modules to improve power conversion efficiency. 2. **Drive circuit: **In the drive circuit,VB1330Can be used to control signals for fast and reliable switching operations. 3. **Current control module: **Suitable for circuits requiring precise current control, such as motor controls and current stabilizers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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