Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
SOT23-3 |
Single-N-Channel |
30V |
20(±V) |
1.7V |
6.5A |
|
33(mΩ) |
30(mΩ) |
|
**VBsemi B3F-VB MOSFET** - **Package type:**SOT23-3-**Channel type:**N-Channel-**Maximum withstand voltage:**30V-**Maximum continuous drain current:**6.
5A-**On-resistance (RDS(ON)):** 30mΩ @ VGS=10V, VGS=20V - **Gate threshold voltage (vth):** 1.
2~2.
2V
Domain and module applications:
**Typical application areas:** 1. **Power management module: **Used for power switches, power inverters and voltage stabilizing modules. 2. **Battery powered system: **Suitable for portable devices, mobile communication devices, etc. 3. **Power conversion module: **existDC-DCConverters and switching power supplies play a role. 4. **Power amplifier: **For use in audio amplifiers and other low to medium power amplifiers.Through applications in these fields,B3F-VB MOSFETCan provide reliable performance and efficient power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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