Product introduction：
**Application Introduction:** This transistor is suitable for various electronic fields, especially in circuits that require N-Channel channels, such as power amplifiers, switching power supplies, etc.
Due to its low drain-source resistance and high current handling capability, it can be used in circuits requiring higher power and efficiency.
**Key Features:** - Ultra-low drain-source resistance - High current handling capability - Suitable for applications such as load switches and power amplifiers This transistor can be used in designs requiring low leakage current, high efficiency and high Power electronic devices.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N-Channel |
30V |
20（±V） |
1.7V |
6.5A |
|
33(mΩ) |
30(mΩ) |
|
VBsemi AM2328NE-T1-PF-VBis a N—ChannelChannel field effect transistor, the specific parameters are as follows: -Rated voltage (VDS): 30V -Rated current (ID): 6.
5A -static drain-Source resistance (RDS(ON)):30mΩ(existVGS=10V, VGS=20Vhour) -threshold voltage (vth): 1.
2~2.
2VPackaged as SOT23-3.
Domain and module applications：
**Typical application areas and modules:** 1. **Power amplifier module: **Due to its high current handling capability, it can be used in audio power amplifier modules. 2. **Switching power supply module: **Suitable for switching power supply modules to provide stable power output. 3. **Drive circuit: **Can be used for various needs N—ChannelChannel drive circuit.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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