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2SK3105-T1B-A-VB Product details
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Application introduction: This model of 2SK3105-T1B-A-VB transistor is suitable for modules in the fields of load switches, power supplies and high current drives.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 30V | 1.7V | 6.5A | 33(mΩ) | 30(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 30V | 1.7V | 6.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 30V | 1.7V | 6.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel |
Detailed parameter description: -model : 2SK3105-T1B-A-VB -silk screen VB1330 -brand :VBsemi-parameter: Nchannel,30V,6.
5A,RDS(ON),30mΩ@10V,33mΩ@4.
5V,20Vgs(±V);1.
2~2.
2Vth(V);SOT23-3-Nchannel :means this is aNchannelMOSFETTransistors for applications such as load switches and power amplifier circuits.
- 30V: MOSFETThe maximum withstand voltage of a transistor is30V, meaning it can work normally within this voltage range.
- 6.
5A: MOSFETThe maximum current of a transistor is6.
5A, indicating that it can withstand the maximum6.
5Aof current.
- RDS(ON),30mΩ@10V,33mΩ@4.
5V: RDS(ON)It refers to the on-resistance of the transistor when it is turned on.
At a given voltage, whenVGSfor10VWhen , the on-resistance is30mΩ;whenVGSfor4.
5VWhen , the on-resistance is33mΩ.
The smaller the on-resistance, the better the conduction performance of the transistor.
- 20Vgs(±V): VGSRefers to the gate voltage range used to control the turn-on of the transistor.
The gate voltage range of this transistor is±20V.
- 1.
2~2.
2Vth(V): VthRefers to the threshold voltage of a transistor, which is the voltage at which the transistor begins to conduct.
The threshold voltage range of this transistor is1.
2Vto2.
2V.
- SOT23-3: SOT23-3It is a transistor packaging type.
It is a small package and easy to weld.
5A,RDS(ON),30mΩ@10V,33mΩ@4.
5V,20Vgs(±V);1.
2~2.
2Vth(V);SOT23-3-Nchannel :means this is aNchannelMOSFETTransistors for applications such as load switches and power amplifier circuits.
- 30V: MOSFETThe maximum withstand voltage of a transistor is30V, meaning it can work normally within this voltage range.
- 6.
5A: MOSFETThe maximum current of a transistor is6.
5A, indicating that it can withstand the maximum6.
5Aof current.
- RDS(ON),30mΩ@10V,33mΩ@4.
5V: RDS(ON)It refers to the on-resistance of the transistor when it is turned on.
At a given voltage, whenVGSfor10VWhen , the on-resistance is30mΩ;whenVGSfor4.
5VWhen , the on-resistance is33mΩ.
The smaller the on-resistance, the better the conduction performance of the transistor.
- 20Vgs(±V): VGSRefers to the gate voltage range used to control the turn-on of the transistor.
The gate voltage range of this transistor is±20V.
- 1.
2~2.
2Vth(V): VthRefers to the threshold voltage of a transistor, which is the voltage at which the transistor begins to conduct.
The threshold voltage range of this transistor is1.
2Vto2.
2V.
- SOT23-3: SOT23-3It is a transistor packaging type.
It is a small package and easy to weld.
Domain and module applications：
1.Load switch module: Because it can withstand large currents and withstand voltage, it can be used in load switch modules to achieve fast switching control of high-power loads. 2.Power module: The transistor has a small on-resistance and can be used in power amplifier circuits to provide a more stable power output. 3.High current drive module: Because it can withstand large currents, it can be used in high current drive modules, such as motor drives or power amplifiers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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