Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N-Channel |
30V |
20（±V） |
1.7V |
6.5A |
|
33(mΩ) |
30(mΩ) |
|
Detailed parameter description: -Package: SOT23-3 -type:Ntrench field effect transistor -Operating Voltage: 30V -Maximum drain current: 6.
5A -Drain-Source resistance:30mΩ@VGS=10V, 33mΩ @VGS=4.
5V -Gate-source voltageVGS: 20V -threshold voltagevth:1.
7V
Domain and module applications：
This product is suitable for the following areas and modules: 1.RF power amplifier module: Due to its high frequency characteristics and low drain resistance, it can be used in RF power amplifier modules, such as RF front-end modules, wireless communication modules, etc. 2.Radio frequency switch module: suitable for power switching devices in radio frequency switch modules, such as antenna switches, signal switchers, etc. 3.RF modem module: It can be used as power regulator, signal amplifier, etc. in the RF modem module. 4.RF sensor module: suitable for signal processors, signal amplifiers, etc. in RF sensor modules.These fields and modules have demands for high-performance, high-frequency power switching devices, andTSM2318CX RF-VBThe performance parameters can meet these needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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