Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N-Channel |
30V |
20（±V） |
1.7V |
6.5A |
|
33(mΩ) |
30(mΩ) |
|
Detailed parameter description: -brand: VBsemi-model: FDN537N-VB -Package: SOT23-3 -type:Nchannel field effect transistor -maximum drain-Source voltage (VDS): 30V -Maximum drain current (ID): 6.
5A -On-resistance (RDS(ON)): -VGS=10Vhour:30mΩ-VGS=4.
5Vhour: 33mΩ -gate-Source voltage (VGS): 20V -threshold voltage (vth):1.
7V
Domain and module applications：
Applicable areas and module examples: 1.Power management module: due to its low on-resistance and moderate drain-source voltage,FDN537N-VBIt can be used in power switching and regulating circuits to achieve efficient energy conversion and power management. 2.Motor Driver: Its high drain current capability and stable performance makeFDN537N-VBSuitable for use in motor drivers and controllers to provide reliable power output and drive performance. 3.LEDDrive: inledlighting field,FDN537N-VBCan be used asleddriver circuit, controlledof brightness and light effects to achieve high-efficiency lighting solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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