Product introduction：
Application Introduction: Si2342DS-T1-GE3 is an N-channel MOSFET for low and medium voltage applications, suitable for power switching, LED driving and battery management modules.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N-Channel |
20V |
12（±V） |
0.5~1.5V |
6A |
42（mΩ） |
28(mΩ) |
|
|
Si2342DS-T1-GE3 (VB1240)Parameter Description:NChannel,20V,6A, on-resistance24mΩ@4.
5V,33mΩ@2.
5V, gate-source voltage range8V(±V), adjustable threshold voltage range0.
5~1.
5V, package:SOT23.
Domain and module applications：
For low and medium voltage applicationsNChannelMOSFET, suitable for power switches,ledModules in areas such as drive and battery management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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