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SI2314EDS-T1-E3-VB Product details

Product introduction:

Model: SI2314EDS-T1-E3-VB Silkscreen: VB1240 Brand: VBsemi SI2314EDS-T1-E3-VB is an N-channel field effect transistor suitable for low power electronic applications.
It has moderate on-resistance and withstand voltage characteristics, suitable for use in small electronic systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-N-Channel 20V 12(±V) 0.5~1.5V 6A 42(mΩ) 28(mΩ)
parameter: -NChannel -Maximum withstand voltage: 20V -Maximum leakage current: 6A -Static on-resistance (RDS(ON)): 24mΩ @ 4.
5V, 33mΩ @ 2.
5V, 8Vgs (±V) -Threshold voltage (Vth): 0.
5V to 1.
5V -Package:SOT23

Domain and module applications:

Domain module application: 1.
Power switch module:SI2314EDS-T1-E3-VBCan be used in low power power switching applications such as portable electronics and battery powered devices.
2.
Signal switch: suitable for low-power signal switching and control circuits, such as small switching circuits and signal switchers.
3.
Low-power modules: They can be used in modules that require low power consumption, such as sensor nodes and small controllers.
These characteristics makeSI2314EDS-T1-E3-VBIt has a wide range of applications in small low-power electronic applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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