Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N-Channel |
20V |
12（±V） |
0.5~1.5V |
6A |
42（mΩ） |
28(mΩ) |
|
|
**Detailed parameter description :** -Architecture : N-Channel MOSFET -Voltage level : 20V -Current capability: 6A - RDS(ON): RDS(ON)=28(mΩ)@VGS=4.
5V,42（mΩ） @VGS=2.
5V; VGS=8V -Threshold voltage(Vth): 0.
5~1.
5V
Domain and module applications：
1.
**Power module: **Suitable for small power modules, it can provide efficient power switching and voltage regulation.
2.
**Battery Management: **It can be used in battery charge and discharge management modules, supporting low threshold voltage and moderate current capacity.
3.
LEDillumination: **Suitable forledLighting driver circuits with sufficient current capability and low on-resistance help achieve efficientledLighting system.
4.
**Signal switch: **AsN-Channel MOSFET, can be used in various signal switching applications to improve the switching speed and efficiency of the circuit.
**Precautions for use :** -When designing a circuit, make sure to understand and follow the maximum voltage and current ratings of the device to prevent device damage.
-Pay attention to proper heat sinking, especially in high current applications, to ensure that the device is within the normal operating temperature range.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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