AP2300GN-HF-VB Product details
Product introduction:
Channel type: N-channel - This indicates that this is an N-channel MOSFET, which is commonly used in electronic devices, especially in applications that need to control negative voltage power supplies.
2.
Rated voltage (VDS): 20V - This is the maximum voltage that the channel MOSFET can withstand, indicating that it is suitable for circuits that need to handle voltages up to 20V.
3.
Rated current (ID): 6A - This is the rated current of the channel MOSFET, indicating the maximum current load it can handle.
4.
Static drain-source resistance (RDS(ON)): - RDS(ON) is the resistance of the channel MOSFET in the on state.
In the case of 4.
5V, its resistance is 24mΩ, and in the case of 2.
5V, it is 33mΩ.
This shows that in the on state, its resistance is relatively low, which helps to reduce power consumption and heat.
5.
Gate-Source Voltage Rating (Vgs): 8V (±V) - This means that the gate-source voltage rating range is plus or minus 8V.
The gate-source voltage is used to control the on and off state of the MOSFET.
6.
Threshold Voltage Range (Vth): 0.
5V to 1.
5V - This is the threshold voltage range of the N-channel MOSFET, which indicates the voltage that needs to be applied to the gate in order for the device to start conducting.
In this case, the threshold voltage range is 0.
5V to 1.
5V.
Application Brief: This type of N-channel MOSFET is commonly used in various power management and switching applications
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 20V | 0.5~1.5V | 6A | 42(mΩ) | 28(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel |
5V, 33mΩ @ 2.
5V, 8Vgs (±V); 0.
5~1.
5Vth (V)Encapsulation: SOT23
Domain and module applications:
Power switch: ThisMOSFETCan be used in power switch modules, such asDC-DCconverter to achieve efficient power conversion.
2.
Battery Management: It can be used in battery protection circuits to control battery charging and discharging and prevent over-discharging.
3.
Power Inverter: In solar inverter andups(Uninterruptible Power Supply),NChannelMOSFETCan be used to control the flow of electrical energy.
4.
Power Selector and Switch: It can be used for power selector and power switch to switch between different power sources.
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