Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N-Channel |
20V |
12（±V） |
0.5~1.5V |
6A |
42（mΩ） |
28(mΩ) |
|
|
The following are the detailed parameters of this product: -brand: VBsemi -Package: SOT23-3 -Channel Type: NChannel -Maximum operating voltage: 20V -Maximum continuous drain current: 6A -On-resistance (RDS(ON)): - @ VGS=4.
5Vhour: 28mΩ - @ VGS=2.
5Vhour: 42mΩ -Threshold voltage (Vth): 0.
5~1.
5V -Maximum gate-to-source voltage (VGS): 8V
Domain and module applications：
This product is suitable for the following areas and modules: 1.
RF front-end module: Due to its fast switching characteristics and low on-resistance, TSM2314CX RF-VBIt can be used in power amplifiers, switches, matching networks and other parts in RF front-end modules to enhance the performance of wireless communication systems.
2.
RF power amplifier: In RF communication systems, this MOSFETIt can be used as a key component of RF power amplifier to provide efficient and stable signal amplification.
3.
Wireless communication equipment: Applicable to power control and switching functions in wireless communication equipment such as wireless routers, base stations and wireless LAN equipment.
4.
RF Modulator: In RF modulator, TSM2314CX RF-VBIt can be used to achieve signal modulation, regulation and amplification, and to optimize the quality and stability of RF signal transmission.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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