Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N-Channel |
20V |
12（±V） |
0.5~1.5V |
6A |
42（mΩ） |
28(mΩ) |
|
|
Detailed parameter description: -brand: VBsemi -model: TSM2302CX RF-VB -Package: SOT23-3 -type:N-ChannelChannelMOSFET -Operating Voltage: 20V -Maximum current: 6A -On-resistance: 28mΩ @ VGS=4.
5V, 42mΩ @ VGS=2.
5V -Threshold voltage: 0.
5~1.
5V -Maximum gate-to-source voltage: 8V
Domain and module applications：
Examples of applicable areas and modules: 1.
Radio Frequency(RF)application:TSM2302CX RF-VBWith low voltage drop and fast response characteristics, it is suitable for applications such as RF power amplifiers, RF switches and RF front-end modules.
2.
Wireless Communication Module: Due to its high efficiency and high frequency characteristics, this model is suitable for use in power amplifiers and modulators in wireless communication systems to provide stable signal output.
3.
Power management module: In the field of power management,TSM2302CX RF-VBCan be used asDC-DCConverters, regulators and switching power supplies for efficient power conversion.
4.
High-frequency power amplifier module: In high-frequency power amplifiers, this model can provide efficient power amplification and signal gain for applications such as wireless communications, radar, and RF control.
These examples illustrateTSM2302CX RF-VBIt is widely used in many fields and modules such as RF applications, wireless communications, power management and high-frequency power amplification.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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