Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC75-6 |
Dual-N+P |
±20V |
12（±V） |
1.0/-1.2V |
0.6/-0.3A |
410/840(mΩ) |
270/660(mΩ) |
|
Trench |
Detailed parameter description:
- Brand: VBsemi
- Product model: VBTA5220N
- Type: Dual N-type and P-type field effect transistors
- VDS (drain-source voltage): ㊣20V
- VGS (gate-source voltage): 12V
- Vth (threshold voltage): 1.0/-1.2V
- RDS(on) On-resistance at VGS=2.5V: 410/840 m次
- RDS(on) On-resistance at VGS=4.5V: 270/660 m次
- Maximum drain current (ID): 0.6/-0.3A
- Technology: Trench
- Package: SC75-6
Domain and module applications：
Application examples:
1. Power management module: suitable for battery management and power switching in portable electronic devices.
2. DC-DC converter: used for high-efficiency power conditioning in power converters.
3. Photovoltaic inverter: suitable for inverter circuits in solar photovoltaic power generation systems.
4. Automotive electronic systems: used in power management and control units in automotive electronic systems.
5. Wireless communication equipment: suitable for power amplification and adjustment modules in wireless routers and base stations.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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