VBTA5220N Product details
Product introduction:
VBsemi's VBTA5220N is a dual N-type and P-type field effect transistor with a drain-source voltage (VDS) of ±20V, a gate-source voltage (VGS) of 12V, and a threshold voltage of 1.0/-1.2V (Vth), and 0.6/-0.3A drain current (ID). Manufactured using Trench technology and packaged as SC75-6.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SC75-6 | Dual-N+P | ±20V | 12(±V) | 1.0/-1.2V | 0.6/-0.3A | 410/840(mΩ) | 270/660(mΩ) | Trench |
- Brand: VBsemi
- Product model: VBTA5220N
- Type: Dual N-type and P-type field effect transistors
- VDS (drain-source voltage): ㊣20V
- VGS (gate-source voltage): 12V
- Vth (threshold voltage): 1.0/-1.2V
- RDS(on) On-resistance at VGS=2.5V: 410/840 m次
- RDS(on) On-resistance at VGS=4.5V: 270/660 m次
- Maximum drain current (ID): 0.6/-0.3A
- Technology: Trench
- Package: SC75-6
Domain and module applications:
Application examples:
1. Power management module: suitable for battery management and power switching in portable electronic devices.
2. DC-DC converter: used for high-efficiency power conditioning in power converters.
3. Photovoltaic inverter: suitable for inverter circuits in solar photovoltaic power generation systems.
4. Automotive electronic systems: used in power management and control units in automotive electronic systems.
5. Wireless communication equipment: suitable for power amplification and adjustment modules in wireless routers and base stations.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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