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VBTA3230NS Product details

Product introduction:

VBTA3230NS is a dual N+N type MOSFET with 20V drain-source voltage (VDS), 20V gate-source voltage (VGS), 0.5~1.5V threshold voltage (Vth), 350mΩ (VGS =2.5V) and on-resistance (RDS(on)) of 300mΩ (VGS=4.5V), and a drain current (ID) of 0.6A. It is manufactured using Trench process and the package is SC75-6.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SC75-6 Dual-N+N 20V 20(±V) 0.5~1.5V 0.6A 350(mΩ) 300(mΩ) Trench
parameter:
- Double N+N type
- VDS(V): 20
- VGS(㊣V): 20
- Vth(V): 0.5~1.5
- RDS(on) VGS=2.5V(m次): 350
- RDS(on) VGS=4.5V(m次): 300
- ID (A): 0.6
- Technology: Trench
Package: SC75-6

Domain and module applications:

Due to its small package and low drain current characteristics, VBTA3230NS is suitable for light load and low power application scenarios. For example,
In mobile devices, it can be used for power switches in battery management modules; in sensor circuits, it can be used as switch tubes in sensor signal conditioning circuits; in portable electronic products, it can be used for battery charge and discharge control in charge management modules. Its small package and low power consumption give it broad application potential in scenarios with limited space and energy consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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