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VBTA2245N Product details

Product introduction:

VBTA2245N is a single P-type MOSFET with low threshold voltage and low drain current. Its Trench technology gives it excellent performance at low voltage and is suitable for use in a variety of circuit modules.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SC75-3 Single-P -20V 12(±V) -0.6V -0.55A 500(mΩ) 450(mΩ) Trench
Product model: VBTA2245N
Brand: VBsemi
parameter:
- Voltage level (VDS): -20V
- Gate-source voltage (VGS): ㊣12V
- Threshold voltage (Vth): -0.6V
- On-state resistance VGS=2.5V (m次): 500m次
- On-state resistance VGS=4.5V (m次): 450m次
- Drain current (ID): -0.55A
- Technology: Trench
Package: SC75-3

Domain and module applications:

Example:
1. Power management module: Since VBTA2245N has low threshold voltage and drain current, it can be used as a switch in the power management module to achieve efficient power conversion and stable voltage output.

2. Signal processing module: Its low on-state resistance enables VBTA2245N to achieve fast signal switching and transmission in the signal processing module, which is suitable for data transmission, signal amplification and other applications.

3. Power tool control module: The Trench technology of VBTA2245N gives it good power characteristics at low voltage and can be used for motor drive, power switch and other functions in the power tool control module.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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