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VBPB112MI40 Product details
Back to previous pageProduct introduction：
"Product Introduction:
The VBPB112MI40 is an IGBT+FRD device packaged in TO3P format. Its key features include a breakdown voltage of 1200V, gate-emitter voltage of ±30V, gate-emitter threshold voltage of 5.5V, saturation voltage (VCEsat) of 1.55V (at VGE=15V), and a maximum collector current of 40A. It is manufactured using FS technology."
The VBPB112MI40 is an IGBT+FRD device packaged in TO3P format. Its key features include a breakdown voltage of 1200V, gate-emitter voltage of ±30V, gate-emitter threshold voltage of 5.5V, saturation voltage (VCEsat) of 1.55V (at VGE=15V), and a maximum collector current of 40A. It is manufactured using FS technology."
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Product parameter：
| VB Package | Configuration | VCE | VGE | VGEth（V） | ICE | VCEsat15V | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | IGBT+FRD | 1200 | ±30 | 5.5 | 40 | 1.55 | FS |
**Detailed Parameter Specifications:**
- **Product Model:** VBPB112MI40
- **Package:** TO3P
- **Structure:** IGBT+FRD
- **Collector-Emitter Voltage (VCE):** 1200V
- **Gate-Emitter Voltage (VGE):** ±30V
- **Gate-Emitter Threshold Voltage (VGEth):** 5.5V
- **Collector-Emitter Saturation Voltage (VCEsat):** 1.55V (at VGE=15V)
- **Maximum Collector Current:** 40A
- **Technology:** FS
- **Product Model:** VBPB112MI40
- **Package:** TO3P
- **Structure:** IGBT+FRD
- **Collector-Emitter Voltage (VCE):** 1200V
- **Gate-Emitter Voltage (VGE):** ±30V
- **Gate-Emitter Threshold Voltage (VGEth):** 5.5V
- **Collector-Emitter Saturation Voltage (VCEsat):** 1.55V (at VGE=15V)
- **Maximum Collector Current:** 40A
- **Technology:** FS
Domain and module applications：
Applicable Fields and Module Examples:
1. Industrial Power Electronics Modules: The VBPB112MI40 is suitable for the industrial power electronics field, such as modules used in power inverters, motor drivers, power regulators, etc., for high-voltage, high-power electrical control and conversion.
2. High Voltage Inverter Modules: Due to its high voltage resistance characteristics, the VBPB112MI40 can be used in high voltage inverter modules, such as inverters for high voltage DC transmission systems, converting DC power into AC power for grid use.
3. High Voltage DC Power Supply Modules: In situations requiring large current output, such as electroplating and electrolysis in industrial applications, the VBPB112MI40 can be used in high voltage DC power supply modules, providing stable and reliable power output.
4. High-Speed Motor Control Modules: Due to its high-power characteristics, the VBPB112MI40 can be used in high-speed motor control modules, such as converters for wind turbines, regulating the output power of wind turbines.
1. Industrial Power Electronics Modules: The VBPB112MI40 is suitable for the industrial power electronics field, such as modules used in power inverters, motor drivers, power regulators, etc., for high-voltage, high-power electrical control and conversion.
2. High Voltage Inverter Modules: Due to its high voltage resistance characteristics, the VBPB112MI40 can be used in high voltage inverter modules, such as inverters for high voltage DC transmission systems, converting DC power into AC power for grid use.
3. High Voltage DC Power Supply Modules: In situations requiring large current output, such as electroplating and electrolysis in industrial applications, the VBPB112MI40 can be used in high voltage DC power supply modules, providing stable and reliable power output.
4. High-Speed Motor Control Modules: Due to its high-power characteristics, the VBPB112MI40 can be used in high-speed motor control modules, such as converters for wind turbines, regulating the output power of wind turbines.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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