Model: ZXMN6A25GTA-VB.
Silkscreen: VBJ1638.
Brand: VBsemi.
Parameters:.
- Type: N-channel.
- Rated voltage (Vds): 60V.
- Maximum continuous current (Id): 7A.
- On-resistance (RDS(ON)): 24mΩ @ 10V, 27mΩ @ 4.5V.
- Gate-source voltage range (Vgs): 20V (positive and negative).
- Threshold voltage range (Vth): 1-3V.
- Package: SOT223.
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Application Introduction:.
ZXMN6A25GTA-VB is an N-channel field effect transistor (MOSFET) with a high rated voltage and moderate current handling capability. It is suitable for a variety of low-power electronic applications that require high energy consumption, low on-resistance and low gate-source voltage operation. .
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Detailed parameter description: .
1. **Type**: This is an N-channel MOSFET, which means it turns on when a positive voltage is input. This type of MOSFET is usually used in switching and regulation circuits. .
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2. **Rated voltage (Vds)**: The maximum drain-source voltage it can withstand is 60V. This means that under normal operating conditions, its voltage should not exceed 60V. .
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3. **Maximum continuous current (Id)**: The maximum current handling capacity of this MOSFET is 7A. Although it is not very high, it is still enough in low-power applications. .
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4. **On-resistance (RDS(ON))**: RDS(ON) is the resistance in the on state, which affects the power consumption and efficiency of the MOSFET. At a gate-source voltage of 10V, its RDS(ON) is 24mΩ, and at 4.5V it is 27mΩ. Low on-resistance means that it can generate less power consumption in the on state. .
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5. **Gate-Source Voltage Range (Vgs)**: The gate-source voltage range of the MOSFET is 20V, which means that a voltage of at least 20V is required to control its conduction state. .
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6. **Threshold Voltage Range (Vth)**: The threshold voltage range of this MOSFET is 1-3V. This is the gate-source voltage range that starts the MOSFET to conduct. .
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7. **Package**: This MOSFET is packaged in SOT223, which is a small package suitable for small circuit boards and space-constrained applications. .
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Applications: .
The ZXMN6A25GTA-VB MOSFET is suitable for a variety of low-power electronic applications, including but not limited to the following areas: .
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1. **Mobile Devices**: It can be used in power management and battery protection circuits for mobile phones, tablets, and portable electronic devices. .
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2. **Power Switch**: It can be used in switch-mode power supplies for voltage conversion and stabilization. .
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3. **LED driver**: For current control and dimming control of LED lighting systems. .
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4. **Low power electronics**: Can be used in embedded systems, microcontrollers, and sensor interfaces to reduce power consumption and improve efficiency. .
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5. **Battery charge and discharge**: Used in battery charge and discharge management circuits to ensure safe and efficient battery use. .
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In short, this MOSFET is suitable for low power electronic modules and devices that require high energy efficiency, low on-resistance, and low gate-source voltage operation. .