Model: vsd090n10ms-VB.
Silk screen: VBE1101M.
Brand: VBsemi.
Parameters:.
- Channel type: N-channel.
- Rated voltage: 100V.
- Maximum continuous current: 18A.
- Static on-resistance (RDS(ON)): 115mΩ @ 10V, 121mΩ @ 4.5V, 20Vgs (±V).
- Threshold voltage (Vth): 1.6V.
- Package: TO252.
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Detailed parameter description:.
vsd090n10ms-VB is an N-channel metal oxide semiconductor field effect transistor (MOSFET) device with a rated voltage of 100V and a maximum continuous current of 18A. Its RDS(ON) performs well at different voltages, which are 115mΩ @ 10V and 121mΩ @ 4.5V. In addition, its threshold voltage (Vth) is 1.6V. .
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Application Introduction: .
vsd090n10ms-VB is commonly used in modules for power management, power switching, power converters, power inverters, and other fields that require high-performance MOSFETs. Due to its high rated voltage and moderate current handling capability, it is suitable for applications requiring high voltage and higher current, such as power switching, power inverters, power converters, motor control, battery protection circuits, etc. The TO252 package makes it easy to integrate into various electronic devices and circuits. This type of MOSFET has low on-resistance and high voltage handling capability, providing excellent performance and high efficiency, and is suitable for applications requiring high-power switching.