Model: SUP85N03-3M6P-GE3-VB. Silk screen: VBM1303. Brand: VBsemi. Parameters:. - Channel type: N-channel. - Rated voltage: 30V. - Maximum continuous current: 120A. - Static on-resistance (RDS(ON)): 3mΩ @ 10V, 4mΩ @ 4.5V, 20Vgs (±V). - Threshold voltage (Vth): 1.7V. - Package: TO220. . Detailed parameter description:. SUP85N03-3M6P-GE3-VB is an N-channel metal oxide semiconductor field effect transistor (MOSFET) device with a rated voltage of 30V and a maximum continuous current of 120A. Its RDS(ON) performs well at different voltages, 3mΩ @ 10V and 4mΩ @ 4.5V. In addition, its threshold voltage (Vth) is 1.7V. . . Application Introduction: . SUP85N03-3M6P-GE3-VB is a high-power N-channel MOSFET suitable for applications requiring high current handling capability. It is commonly used in modules for power switches, motor control, power converters, power inverters, battery protection circuits, and other fields that require high-performance MOSFETs. The TO220 package makes it suitable for a variety of high-power applications such as power amplifiers, power tools, industrial controls, and automotive electronics. With its low on-resistance and high current handling capability, this MOSFET provides excellent performance and high efficiency, making it an ideal choice for applications requiring high-power switching.
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