Model: SUD50P04-08-GE3.
Silk screen: VBE2412.
Brand: VBsemi.
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Detailed parameter description: .
- Type: P-channel MOSFET.
- Max. Withstand voltage: -40V.
- Maximum current: -65A.
- On-resistance: 10mΩ@10V, 13mΩ@4.5V.
- Gate-source voltage: 20Vgs (±V).
- Gate threshold voltage: -1.6Vth.
- Package: TO252.
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Application introduction: .
SUD50P04-08-GE3 is a P-channel MOSFET, suitable for high power switching and Negative voltage control applications. Its maximum withstand voltage is -40V, its maximum current is -65A, and it has low on-resistance and high performance. .
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This device is suitable for module design in a variety of application fields, including but not limited to: .
1. Power management module: suitable for high-power DC-DC converters, inverters and automobiles Negative power control in electronics. .
2. Converter module: suitable for output regulation of high voltage converters and high current load switches. .
3. Power tools: Can be used to drive negative power control and load switches in high-power power tools. .
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In short, SUD50P04-08-GE3 is suitable for module design in fields that require high power switching and negative voltage control, including power management, converter modules, and power tools.