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STD2NB60T4-VB, a N-channel TO252 MOSFET datasheet parameters video explanation
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Model: STD2NB60T4-VB.
Silkscreen: VBE165R04.
Brand: VBsemi.
Parameters:.
- Channel type: N-channel.
- Rated voltage: 650V.
- Rated current: 4A.
- Static on-resistance (RDS(ON)): 2200mΩ @ 10V, 2750mΩ @ 4.5V, 20Vgs (±V).
- Threshold voltage (Vth): 3.5V.
- Package type: TO252.
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Application introduction:.
STD2NB60T4-VB is an N-channel field effect transistor (FET) with high rated voltage and moderate current characteristics, as well as relatively high on-resistance. This makes it suitable for use in power switching and circuit protection applications. .
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Application fields: .
1. Power switch module: STD2NB60T4-VB can be used in power switch circuits such as switching regulators, DC-DC converters and inverters to achieve efficient power conversion and power management. .
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2. Circuit protection: In circuit protection devices, this transistor can be used for overcurrent protection, short circuit protection and voltage protection to ensure the safe operation of the circuit. .
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3. Motor control: In motor drive circuits and motor controllers, it can be used for motor start and stop and speed regulation. .
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4. Power factor correction: In power factor correction circuits, STD2NB60T4-VB can be used to improve power factor and reduce harmonic distortion. .
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In short, STD2NB60T4-VB is an N-channel field effect transistor suitable for power switch and circuit protection applications, suitable for power management, circuit protection, motor control and power factor correction. Its TO252 package makes it suitable for various circuit designs.

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