Model: SSC8035GS6-VB.
Silkscreen: VB2355.
Brand: VBsemi.
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Detailed parameter description:.
- P-channel.
- Maximum withstand voltage: -30V.
- Maximum drain current: -5.6A.
- Drain-source resistance: 47mΩ @ 10V, 56mΩ @ 4.5V.
- Maximum gate-source voltage: ±20V.
- Threshold voltage: -1V.
- Package: SOT23.
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Application introduction:.
This product is a P-channel MOSFET suitable for electronic device modules in various fields. Its main features are low drain-source resistance and high withstand voltage capability. By controlling the gate voltage, the on-off switch between the drain and the source can be realized. It can be used in application scenarios such as power amplification, current control and switch drive. .
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This product is suitable for the following field modules: .
1. Power module: used for power management, voltage regulation, voltage stabilization and other power system construction; .
2. Power tool module: used for power switch, current control, etc. of power tools; .
3. Automotive electronics module: used for switch drive, circuit protection, etc. of automotive electronic systems; .
4. Communication module: used for power amplification, signal switch, etc. of communication equipment; .
5. Industrial control module: used for current control and switch drive in industrial control systems. .
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In short, SSC8035GS6-VB is a P-channel MOSFET suitable for modules in multiple fields. It has the characteristics of low resistance and high withstand voltage. It is widely used in power supply, power tools, automotive electronics, communication and industrial control. .