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SQD50P06-15L-GE3-VB, a P-channel TO252 MOSFET datasheet parameters video explana
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Model: SQD50P06-15L-GE3.
Silkscreen: VBE2625.
Brand: VBsemi.
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Detailed parameter description:.
- Type: P-channel MOSFET.
- Maximum withstand voltage: -60V.
- Maximum current: -50A.
- On-resistance: 20mΩ @10V, 25mΩ @4.5V.
- Gate-source voltage: 20Vgs (±V).
- Gate threshold voltage: -1.76Vth.
- Package: TO252.
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Application introduction:.
SQD50P06-15L-GE3 is a P-channel MOSFET suitable for high power applications of negative voltage control and load switching. Its maximum withstand voltage is -60V, maximum current is -50A, with low on-resistance and high performance. .
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This device is suitable for module design in multiple fields, mainly including: .
1. Power management module: suitable for high-power DC-DC converters, inverters and battery management systems. .
2. High-efficiency power switch module: can be used for high-power load switches and power controllers. .
3. Power tools: suitable for driving negative power control and load switches in high-power power tools. .
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In short, SQD50P06-15L-GE3 is suitable for module design in high-power application fields such as negative voltage control and load switching, including power management, high-efficiency power switch modules and power tools.

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