Model: SQD50P06-15L-GE3. Silkscreen: VBE2625. Brand: VBsemi. . Detailed parameter description:. - Type: P-channel MOSFET. - Maximum withstand voltage: -60V. - Maximum current: -50A. - On-resistance: 20mΩ @10V, 25mΩ @4.5V. - Gate-source voltage: 20Vgs (±V). - Gate threshold voltage: -1.76Vth. - Package: TO252. . Application introduction:. SQD50P06-15L-GE3 is a P-channel MOSFET suitable for high power applications of negative voltage control and load switching. Its maximum withstand voltage is -60V, maximum current is -50A, with low on-resistance and high performance. . . This device is suitable for module design in multiple fields, mainly including: . 1. Power management module: suitable for high-power DC-DC converters, inverters and battery management systems. . 2. High-efficiency power switch module: can be used for high-power load switches and power controllers. . 3. Power tools: suitable for driving negative power control and load switches in high-power power tools. . . In short, SQD50P06-15L-GE3 is suitable for module design in high-power application fields such as negative voltage control and load switching, including power management, high-efficiency power switch modules and power tools.
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