Model: SQ9407EY-T1-GE3-VB.
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Screen printing: VBA2658.
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Brand: VBsemi.
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Package: SOP8.
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**Detailed parameter description:**.
- **Channel Type:** P—Channel.
- **Maximum Drain Current:** -6A.
- **Maximum Drain-Source Voltage:** -60V.
- **On-Resistance:** RDS(ON)=50mΩ @ VGS=10V, VGS =20V.
- **Threshold Voltage (Gate Threshold Voltage): ** Vth=-1.5V.
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**Application Introduction: **.
SQ9407EY-T1-GE3-VB It is a P-Channel field effect transistor with excellent characteristics such as low leakage current, high leakage voltage, and low on-resistance. It adopts SOP8 standard package and is suitable for a variety of electronic applications. .
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**Main application field modules:**.
1. **Power switch module:** Due to the P-Channel structure of SQ9407EY-T1-GE3-VB, it is suitable for power switch modules , achieving efficient power control and management. .
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2. **Current Control Module:** The device's high leakage current and low on-resistance make it excellent in current control modules for precise current control applications. .
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3. **Power amplifier module:** Due to its high drain voltage and low on-resistance, it is suitable for power amplifier modules and can provide reliable power amplification function. .
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4. **Battery protection module:** Due to its balance of performance parameters, it can be used in battery protection circuits to provide effective protection for the battery. .
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Please select the appropriate components based on your specific system design needs and ensure that the appropriate specifications and design guidelines are followed.