SIR422DP-T1-GE detailed parameter description:.
- Polarity: N channel.
- Rated voltage: 40V.
- Rated current: 75A.
- On-resistance: 4.7mΩ @ 10V, 6mΩ @ 4.5V.
- Gate-source voltage: 20Vgs (±V).
- Threshold voltage: 1.9Vth (V).
- Package type: DFN8 (5X6).
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Application Introduction: .
SIR422DP-T1-GE3 is an N-channel MOSFET suitable for various power management and power amplifier applications. With high rated voltage and current characteristics, it can provide reliable and efficient current switching function. .
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By controlling the gate-source voltage of 20Vgs (±V), the switch tube can be turned on and off, and the current can be controlled and the switching state converted. Its lower on-resistance reduces power consumption and increases system efficiency. .
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SIR422DP-T1-GE3 adopts DFN8 (5X6) package and is suitable for use in various circuit boards and modules. .
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This device is widely used in power switches, power inverters, motor drivers and other fields. Due to its higher rated voltage and current rating characteristics, SIR422DP-T1-GE3 is particularly suitable for applications requiring high power and high current transmission. In these areas, it provides reliable power switching control and current transfer. .
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In short, SIR422DP-T1-GE3 is an N-channel MOSFET suitable for application modules such as power management and power amplifiers. Especially suitable for areas requiring high power and high current transmission, such as power switches, motor drivers, etc.