**VBsemi SIR416DP-T1-GE3-VB Product detailed parameter description: **.
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- **Silk screen logo: ** VBQA1402.
- **Brand: ** VBsemi.
- **Package:** DFN8(5X6).
- **Channel type:** N—Channel channel.
- **Drain-source voltage (V_DS): ** 40V.
- **Drain-source current (I_D): ** 123A.
- **On-resistance (R_{DS (ON)}): ** 2mΩ @ V_GS=10V, 2mΩ @ V_GS=20V.
- **Threshold voltage (V< sub>th): ** 1~3V.
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**Application introduction:**.
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VBsemi SIR416DP-T1-GE3-VB is a DFN8( 5X6) packaged N-Channel field effect transistor (MOSFET), suitable for high-power switching power supplies and motor drive applications. .
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**Main application areas and modules:**.
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1. **Power switch module:** Suitable for DC-DC converters and power supplies Switch control, etc. .
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2. **Motor drive module:** Can be used for high-power motor drive, providing high current and low on-resistance characteristics. .
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**Function:**.
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- Provide power switch control with high current and low on-resistance. .
- For high power motor drive modules, supporting high efficiency and performance. .
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**Precautions for use:**.
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1. **Voltage level:** Use within the specified voltage range and do not exceed the nominal maximum drain of the product -Source voltage. .
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2. **Current load:** Note that the current load does not exceed the rated current of the product. .
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3. **Operating temperature:** Use within the specified operating temperature range to avoid over-temperature operation. .
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The above information is for reference only. When using it, please read the product manual and specifications carefully to ensure correct use and follow the manufacturer's recommendations and precautions.