SiA400EDJ-T1-GE3-VB, a N-channel DFN6(2X2) MOSFET datasheet parameters video exp

SiA400EDJ-T1-GE3 is an N-channel power field effect transistor with the following parameters: .
.
- Maximum withstand voltage: 30V.
.
- Maximum drain current: 5.8A .
.
- Resistance at turn-on (RDS(ON)): 22mΩ@10V, 28mΩ@4.5V.
.
- Gate voltage (Vgs) range: ±20V.
.
- Threshold voltage (Vth): 1.2V.
.
- Package: DFN6 (2X2).
.
.
.
This product is suitable for Modules in the following fields: .
.
- Power switch: SiA400EDJ-T1-GE3 can be used as the main device in the power switch module for power control and conversion. .
.
- Motor drive: suitable for various motor drive modules, providing stable power amplification and driving capabilities. .
.
- Power management: In the power management module, it can be used to implement functions such as power switch, power protection and power management. .
.
- LED lighting: It can be used in LED lighting modules to realize the driving and brightness control of LED lights. .
.
.
.
In summary, SiA400EDJ-T1-GE3 is suitable for modules in the fields of power switches, motor drives, power management and LED lighting. .