SiA400EDJ-T1-GE3 is an N-channel power field effect transistor with the following parameters: .
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- Maximum withstand voltage: 30V.
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- Maximum drain current: 5.8A .
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- Resistance at turn-on (RDS(ON)): 22mΩ@10V, 28mΩ@4.5V.
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- Gate voltage (Vgs) range: ±20V.
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- Threshold voltage (Vth): 1.2V.
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- Package: DFN6 (2X2).
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This product is suitable for Modules in the following fields: .
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- Power switch: SiA400EDJ-T1-GE3 can be used as the main device in the power switch module for power control and conversion. .
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- Motor drive: suitable for various motor drive modules, providing stable power amplification and driving capabilities. .
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- Power management: In the power management module, it can be used to implement functions such as power switch, power protection and power management. .
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- LED lighting: It can be used in LED lighting modules to realize the driving and brightness control of LED lights. .
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In summary, SiA400EDJ-T1-GE3 is suitable for modules in the fields of power switches, motor drives, power management and LED lighting. .