Model: SI4539DY-T1-E3-VB.
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**Silkscreen:** VBA5325.
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**Brand:** VBsemi.
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**Parameters:**.
- Type: N+P channel.
- Rated voltage (Vds): ±30V.
- Maximum current (Id): 9A (N channel), -6A (P channel).
- Static drain-source resistance (RDS(ON)): 15mΩ (N channel) / 42mΩ (P channel) @ 10V, 19mΩ (N channel) / 50mΩ (P channel) @ 4.5V, 20Vgs (±V).
- Threshold voltage (Vth): ±1.65V.
- Package: SOP8.
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**Product Introduction:**.
SI4539DY-T1-E3-VB is an N+P channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) device produced by VBsemi, with a dual channel structure, suitable for a variety of power switching and control applications. The device has low static drain-source resistance (RDS(ON)) and moderate current handling capability, suitable for high-performance electronic circuits. .
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**Main Features:**.
- Dual channel structure: It has two channels, N channel and P channel, which can be used in a variety of power switching and control applications. .
- Low on-resistance: It has low static drain-source resistance (RDS(ON)), which helps to reduce power consumption and improve efficiency. .
- High current handling capability: It can withstand higher current and is suitable for high power applications. .
- SOP8 package: The SOP8 package is small and suitable for compact circuit design. .
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**Application fields:**.
SI4539DY-T1-E3-VB is usually used in the following fields and modules:.
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1. **Power switch device:** Due to its dual-channel structure, it is often used as a power switch device such as switching power supply, inverter and voltage regulator to improve the efficiency and performance of the circuit. .
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2. **Motor control:** This model can also be used as a switching element in a motor controller to achieve efficient control of the motor, such as DC motor and stepper motor control. .
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3. **Power management:** SI4539DY-T1-E3-VB can be used in power management modules such as battery charging, power selection and power switching to achieve efficient power management. .
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4. **Power amplifier:** In the power amplifier circuit, it can be used to enhance the performance of the signal amplifier. .
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It should be noted that specific application areas may vary depending on product use, circuit design and specification requirements. When selecting and using this model, it is recommended to determine its suitability based on the electrical characteristics and performance requirements of the specific application. This device is suitable for applications that require high power, high current and efficient energy consumption control.