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SI4532CDY-T1-GE3-VB, a N+P-channel SOP8 MOSFET datasheet parameters video explan
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Model: SI4532CDY-T1-GE3-VB.
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Silk screen: VBA5325.
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Brand: VBsemi.
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Parameters: .
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- Package: SOP8.
- Channel type: N+P—Channel.
- Rated voltage: ±30V.
- Maximum current: 9A (N-Channel)/-6A (P-Channel).
- On-state resistance: RDS(ON)=15mΩ@VGS=10V (N-Channel), 42mΩ@VGS=20V (P-Channel).
- Threshold voltage: Vth=±1.65V.
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Application introduction: .
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SI4532CDY-T1-GE3-VB is an N+P-Channel field effect transistor, packaged as SOP8. Its main application areas include but are not limited to: .
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1. **Power switch module:** Suitable for power switch circuits, providing reliable power switch functions, and widely used in power management systems and portable electronic equipment . .
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2. **Power inverter:** In fields such as solar inverters, it can be used to convert DC to AC to provide electrical energy output for renewable energy systems. .
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3. **Current control module:** Suitable for circuits that need to regulate current, such as current sources, current controllers, etc. .
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4. **Battery protection module:** In the lithium battery protection circuit, it is used to protect the battery from over-discharge and over-charge. .
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5. **Motor drive:** In the drive circuit of small motors, such as power tools, small electric vehicles, etc. .
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The characteristics of SI4532CDY-T1-GE3-VB make it perform well in the above applications. It is a multi-functional and reliable field effect transistor.

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