Model: SI4532ADY-T1-E3-VB.
Silkscreen: VBA5325.
Brand: VBsemi.
Parameters:.
- Type: N+P channel.
- Rated voltage (Vds): ±30V.
- Maximum continuous current (Id): 9A (N channel) / -6A (P channel).
- On-resistance (RDS(ON)): 15mΩ @ 10V (N channel) / 42mΩ @ 10V (P channel).
- Gate-source voltage range (Vgs): 20V (positive and negative).
- Threshold voltage (Vth): ±1.65V.
- Package: SOP8.
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Application Introduction:.
SI4532ADY-T1-E3-VB is an N+P channel MOSFET, which includes both N-channel and P-channel MOSFETs. It is suitable for electronic applications that need to control both positive and negative voltages, such as power switching and current control. .
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Detailed parameter description: .
1. **Type**: This is an N+P channel MOSFET, which includes two types of MOSFETs, N-channel and P-channel. N-channel MOSFET is used for forward voltage operation, and P-channel MOSFET is used for negative voltage operation. .
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2. **Rated voltage (Vds)**: The maximum drain-source voltage it can withstand is ±30V. This means that it can handle both positive and negative voltages. .
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3. **Maximum continuous current (Id)**: The maximum current handling capacity of N-channel MOSFET is 9A, while that of P-channel MOSFET is -6A. This means that N-channel MOSFET can be used for forward current, while P-channel MOSFET can be used for negative current. .
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4. **On-resistance (RDS(ON))**: RDS(ON) is the resistance in the on state, which affects the power consumption and efficiency of the MOSFET. At a gate-source voltage of 10V, the RDS(ON) of the N-channel MOSFET is 15mΩ and that of the P-channel MOSFET is 42mΩ. Low on-resistance means that it can generate less power consumption in the on state. .
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5. **Gate-source voltage range (Vgs)**: The gate-source voltage range of the MOSFET is 20V, which means that a voltage of up to 20V is required to control its on state. .
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6. **Threshold voltage (Vth)**: The threshold voltage of the N-channel MOSFET is 1.65V positive and that of the P-channel MOSFET is 1.65V negative. This is the gate-source voltage that starts the MOSFET on. .
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7. **Package**: This MOSFET uses the SOP8 package, which is a common package type suitable for a variety of circuit applications. .
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Application fields: .
SI4532ADY-T1-E3-VB This N+P channel MOSFET is suitable for a variety of electronic applications that need to control both positive and negative voltages, including but not limited to the following modules: .
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1. **Power switch**: It can be used in power switch circuits to control both positive and negative voltages, such as voltage conversion and current control. .
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2. **Battery management**: It is used for battery charging and discharging management to ensure safe and efficient battery use. .
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3. **Current control**: It can be used in current control circuits, such as motor control and current amplifiers. .
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4. **Inverter**: It is used in inverter circuits to convert DC to AC, such as solar inverters and power inverters. .
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In short, this N+P channel MOSFET is suitable for electronic modules and devices that need to handle both positive and negative voltages, providing power control and current management functions. .