Si2399DS-T1-GE3 parameters: P-channel, -20V, -4A, RDS(ON), 57mΩ@4.5V, 83mΩ@2.5V, 12Vgs(±V); -0.81Vth(V); SOT23.
Application Introduction: Si2399DS-T1-GE3 is a P-channel MOSFET suitable for applications that require current control. .
Due to its low on-resistance (RDS(ON)), it can effectively reduce conduction losses and perform well in circuits that require high-efficiency conversion. .
Commonly used in power management, DC-DC conversion and other circuits, such as adapters, battery chargers, etc. .
Advantages: The main advantages of Si2399DS-T1-GE3 include: Low on-resistance: With low on-resistance, power loss and heat generation are reduced. .
Reliability: VBsemi is a well-known semiconductor brand, and its products have undergone strict quality control and have high reliability. .
Package: The small SOT23 package is suitable for designs with limited space. .
Applicable modules: Si2399DS-T1-GE3 can be used in DC-DC converter circuits in mobile phone charging modules. .
When charging a mobile phone, the input voltage (usually 5V or 9V) needs to be converted to a voltage suitable for charging the battery. .
MOSFETs can be used as switches in these converters to control the flow of current and achieve efficient power conversion. .
The low on-resistance of this model helps reduce conversion losses and improve charging efficiency, while the SOT23 package is suitable for the small design requirements of mobile phone modules. .