SI2333CDS-T1-GE3 Parameters: P-channel, -20V, -4A, RDS(ON) 57mΩ@4.5V, 83mΩ@2.5V, 12Vgs(±V), -0.81Vth(V), SOT23. Application Introduction: SI2333CDS-T1-GE3 is a P-channel MOSFET suitable for low voltage and high current. . Its low on-resistance and small package are suitable for high-efficiency and miniaturized circuits. . Commonly used in battery-powered devices, small electronic devices, etc. . Advantages: Low on-resistance: Contributes to high-efficiency current switching control. . Suitable for low voltage: Suitable for low voltage operation, such as battery-powered devices. . Applicable modules: SI2333CDS-T1-GE3 is suitable for modules that require low voltage and high current switching control, such as battery-powered small devices, mobile devices, etc. .
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