Model: SI2323DS-T1-GE3.
Silk screen: VB2355.
Brand: VBsemi.
.
Detailed parameter description: .
- Type: P-channel MOSFET.
- Max. Withstand voltage: -30V.
- Maximum current: -5.6A.
- On-resistance: 47mΩ @10V, 56mΩ @4.5V.
- Gate-source voltage: 20Vgs (±V).
- Gate threshold voltage: -1Vth.
- Package: SOT23.
.
Application introduction: .
SI2323DS-T1-GE3 is a P-channel MOSFET, suitable for negative voltage control and Load switch applications. Its maximum withstand voltage is -30V, its maximum current is -5.6A, and it has low on-resistance and high performance. .
.
This device is suitable for module design in many fields, mainly including: .
1. Power management module: suitable for power management module responsible for power switch and load switch control. .
2. Converter module: Can be used for the converter module responsible for negative voltage conversion and inversion. .
3. Portable equipment: suitable for load switching and power control in portable electronic equipment. .
.
In short, SI2323DS-T1-GE3 is suitable for module design in the application fields of negative voltage control and load switching, mainly used in fields such as power management, converter modules and portable devices.