Model: SI2323DDS-T1-GE3 .
Silk screen: VB2355 .
Brand: VBsemi .
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Parameters: .
- Channel type: P channel.
- Rated voltage : -30V.
- Rated current: -5.6A.
- On-resistance: 47mΩ @ 10V, 56mΩ @ 4.5V, 20Vgs (±V).
- Threshold voltage: -1V.
- Package type: SOT23.
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Detailed parameter description: .
SI2323DDS-T1-GE3 is a P-channel MOS transistor, suitable for a maximum operating voltage of -30V, a maximum of -5.6A Current carrying capacity. Its on-resistance is 47mΩ at 10V and 56mΩ at 4.5V. The threshold voltage is -1V, and normal conduction can only be achieved when the control voltage is lower than the threshold. The package type is SOT23. .
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Application Introduction: .
SI2323DDS-T1-GE3 is suitable for applications requiring low voltage and medium current, such as power switches, battery protection, power management, etc. Its low on-resistance and low voltage rating enable it to provide high-efficiency conversion and reliable switching control. In the power switch module, battery protection module and power management module, SI2323DDS-T1-GE3 can provide stable power transmission and reliable circuit protection. .
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In summary, SI2323DDS-T1-GE3 is suitable for applications with low voltage and medium current carrying capacity, especially for modules in the fields of power switches, battery protection and power management. Their low on-resistance, lower rated voltage and stable performance provide these modules with high-efficiency conversion and reliable circuit control.