SI2323CDS-T1-GE3 (VB2355) parameter description: P channel, -30V, -5.6A, on-resistance 47mΩ@10V, 56mΩ@4.5V, gate-source voltage range 20V (±V), threshold voltage -1V, package: SOT23. . Application introduction: SI2323CDS-T1-GE3 is suitable for P-channel MOSFET for power switching and voltage regulation applications. . Its low on-resistance helps reduce power loss and improve efficiency. . Applicable fields and modules: Suitable for modules in fields such as power switching, voltage regulation and inverter, especially suitable for scenarios requiring low power loss. .
* If you need to request samples from our company, please fill out the form and submit it. We will respond within 24 hours.
X
SN Check
***Serial Number Lookup Prompt**
1. Enter the complete serial number, including all letters and numbers.
2. Click Submit to proceed with verification.
The system will verify the validity of the serial number and its corresponding product information to help you confirm its authenticity.
If you notice any inconsistencies or have any questions, please immediately contact our customer service team. You can also call 400-655-8788 for manual verification to ensure that the product you purchased is authentic.
立即下载
中文
English
